CLF1G0060S-10U
NXP USA Inc.
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
$87.51
Available to order
Reference Price (USD)
1+
$120.60000
20+
$113.70400
40+
$106.81275
100+
$99.92170
Exquisite packaging
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Meet the CLF1G0060S-10U, a state-of-the-art RF MOSFET transistor from NXP USA Inc., designed for the Discrete Semiconductor Products industry under the Transistors - FETs, MOSFETs - RF subcategory. This component shines in high-frequency environments with its exceptional linearity, low parasitic capacitance, and high power gain. It's the go-to choice for applications such as TV transmitters, satellite receivers, and industrial RF generators. The CLF1G0060S-10U combines cutting-edge semiconductor technology with NXP USA Inc.'s rigorous quality control to provide a transistor that exceeds expectations in both performance and reliability. Incorporate the CLF1G0060S-10U into your RF designs for superior signal processing and amplification capabilities.
Specifications
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 3GHz ~ 3.5GHz
- Gain: 14.5dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 50 mA
- Power - Output: 10W
- Voltage - Rated: 150 V
- Package / Case: SOT-1227B
- Supplier Device Package: SOT-1227B
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