CPC3703CTR
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
MOSFET N-CH 250V 360MA SOT89-3
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the CPC3703CTR by IXYS Integrated Circuits Division, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The CPC3703CTR stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS Integrated Circuits Division.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89-3
- Package / Case: TO-243AA
Related Products
Diodes Incorporated
ZXMP4A16GQTC
Panjit International Inc.
PJC7476_R1_00001
onsemi
FDMA430NZ
onsemi
NTD18N06LT4G
Diodes Incorporated
ZVN4525E6TA
IXYS
IXFN80N50Q3
NXP USA Inc.
BUK751R6-30E,127
Renesas Electronics America Inc
H5N2007FN-E
Infineon Technologies
IAUC100N08S5N031ATMA1
onsemi