CSD16327Q3T
Texas Instruments
Texas Instruments
MOSFET N-CH 25V 60A 8VSON
$1.46
Available to order
Reference Price (USD)
250+
$0.78692
500+
$0.69540
750+
$0.60756
1,250+
$0.54900
Exquisite packaging
Discount
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The CSD16327Q3T from Texas Instruments sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Texas Instruments's CSD16327Q3T for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
- Package / Case: 8-PowerTDFN
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