CSD16570Q5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 25V 100A 8VSON
$2.93
Available to order
Reference Price (USD)
250+
$1.65000
500+
$1.44376
750+
$1.30351
1,250+
$1.19625
Exquisite packaging
Discount
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Upgrade your designs with the CSD16570Q5BT by Texas Instruments, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the CSD16570Q5BT is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (5x6)
- Package / Case: 8-PowerTDFN
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