CSD18509Q5BT
Texas Instruments

Texas Instruments
MOSFET N-CH 40V 100A 8VSON
$2.90
Available to order
Reference Price (USD)
1+
$2.90000
500+
$2.871
1000+
$2.842
1500+
$2.813
2000+
$2.784
2500+
$2.755
Exquisite packaging
Discount
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The CSD18509Q5BT from Texas Instruments sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Texas Instruments's CSD18509Q5BT for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN