CSD18513Q5AT
Texas Instruments
Texas Instruments
MOSFET N-CH 40V 124A 8VSON
$1.43
Available to order
Reference Price (USD)
1+
$1.43000
500+
$1.4157
1000+
$1.4014
1500+
$1.3871
2000+
$1.3728
2500+
$1.3585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CSD18513Q5AT by Texas Instruments is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Texas Instruments for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4280 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
APT14F100B
Infineon Technologies
ISP16DP10LMXTSA1
Panjit International Inc.
PJC7438_R1_00001
Goford Semiconductor
G15N10C
onsemi
2N7000-D74Z
Panjit International Inc.
2N7002KTB_R1_00001
Goford Semiconductor
GC20N65F
onsemi
HUF75639P3-F102
IXYS
IXKC23N60C5
Nexperia USA Inc.