CSD19533KCS
Texas Instruments

Texas Instruments
MOSFET N-CH 100V 100A TO220-3
$1.93
Available to order
Reference Price (USD)
1+
$1.66000
10+
$1.49600
50+
$1.33880
100+
$1.20760
500+
$0.94502
1,000+
$0.78750
2,500+
$0.76125
Exquisite packaging
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Discover the CSD19533KCS from Texas Instruments, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the CSD19533KCS ensures reliable performance in demanding environments. Upgrade your circuit designs with Texas Instruments's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3