CSD19537Q3
Texas Instruments
Texas Instruments
MOSFET N-CH 100V 9.7A/50A 8VSON
$1.47
Available to order
Reference Price (USD)
2,500+
$0.50540
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the CSD19537Q3 single MOSFET from Texas Instruments. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Texas Instruments's CSD19537Q3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON (3.3x3.3)
- Package / Case: 8-PowerVDFN
Related Products
Fairchild Semiconductor
FQPF6P25
Panjit International Inc.
PJQ5446-AU_R2_000A1
Renesas Electronics America Inc
2SK4202-S19-AY
Vishay Siliconix
IRF830ALPBF
STMicroelectronics
STFU10NK60Z
Infineon Technologies
BSC080N03LSGATMA1
Alpha & Omega Semiconductor Inc.
AOW2502
onsemi
NTHL050N65S3HF
onsemi
FDMC86520L
STMicroelectronics