CSD25310Q2
Texas Instruments
Texas Instruments
MOSFET P-CH 20V 20A 6WSON
$0.65
Available to order
Reference Price (USD)
3,000+
$0.19995
6,000+
$0.18705
15,000+
$0.18060
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the CSD25310Q2 single MOSFET from Texas Instruments. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Texas Instruments's CSD25310Q2 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.9W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
onsemi
FQT1N80TF-WS
STMicroelectronics
STL8N10F7
Vishay Siliconix
IRF610STRLPBF
Infineon Technologies
IRF1018ESTRLPBF
onsemi
FDP18N20F
onsemi
FDD120AN15A0
Vishay Siliconix
SI7812DN-T1-E3
onsemi
FDMS86163P
onsemi
FDMC4435BZ
Vishay Siliconix