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CSD25501F3T

Texas Instruments
CSD25501F3T Preview
Texas Instruments
MOSFET P-CH 20V 3.6A 3LGA
$0.93
Available to order
Reference Price (USD)
250+
$0.18852
500+
$0.15600
750+
$0.13000
1,250+
$0.11700
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 76mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.33 nC @ 4.5 V
  • Vgs (Max): -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-LGA (0.73x0.64)
  • Package / Case: 3-XFLGA

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