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CUS10S30,H3F

Toshiba Semiconductor and Storage
CUS10S30,H3F Preview
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A USC
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06400
6,000+
$0.05760
15,000+
$0.05120
30,000+
$0.04800
75,000+
$0.04480
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 230 mV @ 100 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 135pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: USC
  • Operating Temperature - Junction: 125°C (Max)

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