CY14V116N-BZ30XI
Infineon Technologies
Infineon Technologies
IC NVSRAM 16MBIT PAR 165FBGA
$66.15
Available to order
Reference Price (USD)
1+
$74.18000
10+
$66.76700
25+
$65.31200
50+
$63.94500
105+
$55.96286
Exquisite packaging
Discount
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Experience top-tier performance with the CY14V116N-BZ30XI Memory IC from Infineon Technologies, a standout in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the requirements of advanced electronic systems. Its innovative architecture ensures efficiency and reliability.
The CY14V116N-BZ30XI exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The CY14V116N-BZ30XI provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The CY14V116N-BZ30XI is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 30ns
- Access Time: 30 ns
- Voltage - Supply: 1.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
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