CY62147GE18-55ZSXI
Infineon Technologies
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
$6.42
Available to order
Reference Price (USD)
1+
$6.92000
10+
$6.36900
25+
$6.23640
50+
$6.21440
135+
$5.57496
270+
$5.40593
540+
$5.14133
1,080+
$4.96125
Exquisite packaging
Discount
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Optimize your electronic designs with the CY62147GE18-55ZSXI Memory IC from Infineon Technologies, a leading component in the Memory category. This IC offers unparalleled data storage and access speeds, making it a must-have for high-performance systems. Its innovative architecture ensures efficiency and reliability in diverse operating conditions.
The CY62147GE18-55ZSXI embodies the essential features of Memory ICs: high capacity, fast operation, and low power consumption. These ICs are pivotal in devices that require rapid data processing, such as digital cameras and communication modules. The CY62147GE18-55ZSXI excels in these areas, providing consistent and dependable performance.
This Memory IC is extensively used in fields like robotics, industrial control systems, and consumer gadgets. For example, it is a key component in robotic arms that require precise and quick data handling. It also enhances the functionality of smart appliances by enabling efficient memory operations. The CY62147GE18-55ZSXI is a top-tier choice for Memory ICs in various industries.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 4Mb (256K x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 55ns
- Access Time: 55 ns
- Voltage - Supply: 1.65V ~ 2.2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package: 44-TSOP II
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