CY7C1312KV18-250BZI
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$10.91
Available to order
Reference Price (USD)
1+
$31.26000
10+
$29.38900
25+
$28.37920
50+
$27.47780
136+
$24.17824
272+
$23.52915
Exquisite packaging
Discount
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Upgrade your systems with the CY7C1312KV18-250BZI Memory IC from Infineon Technologies, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The CY7C1312KV18-250BZI showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The CY7C1312KV18-250BZI excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The CY7C1312KV18-250BZI is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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