CY7C1312KV18-250BZXI
Rochester Electronics, LLC

Rochester Electronics, LLC
NO WARRANTY
$33.05
Available to order
Reference Price (USD)
1+
$32.83000
10+
$30.85800
25+
$29.79800
50+
$28.85160
136+
$25.38713
272+
$24.70563
Exquisite packaging
Discount
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Enhance your projects with the CY7C1312KV18-250BZXI Memory IC from Rochester Electronics, LLC, a top-tier component in the Memory category. This IC is designed to deliver high-speed data access and substantial storage capacity, meeting the needs of sophisticated electronic systems. Its innovative design ensures optimal performance and energy efficiency.
The CY7C1312KV18-250BZXI exemplifies the key characteristics of Memory ICs: high reliability, fast data transfer, and compact form factors. These ICs are crucial for devices that require instant data retrieval and storage, such as smartphones and embedded systems. The CY7C1312KV18-250BZXI provides these benefits while maintaining low power consumption and thermal efficiency.
This Memory IC is widely used in applications like networking equipment, IoT devices, and automotive electronics. For example, it is integral to routers and switches that manage high volumes of data traffic. It also plays a vital role in smart home devices, enabling seamless operation. The CY7C1312KV18-250BZXI is a superior choice for high-performance Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)