CY7C1313KV18-250BZXI
Infineon Technologies
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$32.92
Available to order
Reference Price (USD)
1+
$27.87000
10+
$26.20300
25+
$25.30280
50+
$24.49900
136+
$21.55728
272+
$20.97853
Exquisite packaging
Discount
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The CY7C1313KV18-250BZXI by Infineon Technologies is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the CY7C1313KV18-250BZXI are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The CY7C1313KV18-250BZXI stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The CY7C1313KV18-250BZXI finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the CY7C1313KV18-250BZXI a preferred Memory IC for diverse uses.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (1M x 18)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)
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