Shopping cart

Subtotal: $0.00

CY7C1314KV18-250BZXI

Infineon Technologies
CY7C1314KV18-250BZXI Preview
Infineon Technologies
NO WARRANTY
$28.07
Available to order
Reference Price (USD)
1+
$26.55000
10+
$24.95500
25+
$24.09800
50+
$23.33240
136+
$20.53074
272+
$19.97956
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)

Related Products

Rohm Semiconductor

BR25G640F-3GE2

Adesto Technologies

AT25FF081A-UUN-T

Winbond Electronics

W66CQ2NQUAHJ

Rochester Electronics, LLC

CY7C1062AV25-10BGC

Adesto Technologies

AT25SF081B-MAHD-T

ISSI, Integrated Silicon Solution Inc

IS61WV51216EDBLL-8TLI-TR

Renesas Electronics America Inc

M5M5V108DKV-70H#ST

GigaDevice Semiconductor (HK) Limited

GD25Q32CWIGR

ISSI, Integrated Silicon Solution Inc

IS46R16320D-6BLA1-TR

Rohm Semiconductor

BR24G16FVJ-3AGTE2

Top