CY7C1315KV18-250BZI
Infineon Technologies

Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
$11.71
Available to order
Reference Price (USD)
1+
$33.57000
10+
$31.55700
25+
$30.47280
50+
$29.50460
136+
$25.96176
272+
$25.26482
Exquisite packaging
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The CY7C1315KV18-250BZI from Infineon Technologies is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the CY7C1315KV18-250BZI ensures longevity and consistent performance in various environments.
Memory ICs like the CY7C1315KV18-250BZI are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the CY7C1315KV18-250BZI delivers unmatched reliability and efficiency.
The CY7C1315KV18-250BZI is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Synchronous, QDR II
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 250 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (13x15)