CYD09S18V18-200BBXC
Infineon Technologies
Infineon Technologies
IC SRAM 9MBIT PARALLEL 256FBGA
$116.26
Available to order
Reference Price (USD)
1+
$116.26000
500+
$115.0974
1000+
$113.9348
1500+
$112.7722
2000+
$111.6096
2500+
$110.447
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with the CYD09S18V18-200BBXC Memory IC from Infineon Technologies, a superior component in the Memory category. This IC is built to provide fast and reliable data storage, essential for today's high-tech devices. Its cutting-edge technology ensures optimal performance and energy savings.
The CYD09S18V18-200BBXC showcases the hallmark traits of Memory ICs: high storage density, rapid access times, and robust construction. These ICs are indispensable for devices that handle large amounts of data, such as tablets and networking hardware. The CYD09S18V18-200BBXC excels in these aspects, offering dependable and efficient memory solutions.
This IC is widely employed in applications like virtual reality systems, automotive navigation, and industrial machinery. For example, it is used in VR headsets to ensure smooth data flow and in car GPS systems for quick route calculations. The CYD09S18V18-200BBXC is a versatile and high-performance Memory IC for various advanced applications.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3 ns
- Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)
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