CYD09S18V18-200BBXI
Rochester Electronics, LLC

Rochester Electronics, LLC
IC SRAM 9MBIT 200MHZ 256LFBGA
$159.99
Available to order
Reference Price (USD)
1+
$159.99000
500+
$158.3901
1000+
$156.7902
1500+
$155.1903
2000+
$153.5904
2500+
$151.9905
Exquisite packaging
Discount
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The CYD09S18V18-200BBXI by Rochester Electronics, LLC is a high-efficiency Memory IC designed for modern electronic applications. As part of the Memory category, this IC delivers exceptional data storage and retrieval performance, catering to the needs of high-speed systems. Its advanced design ensures reliability and longevity.
Memory ICs like the CYD09S18V18-200BBXI are renowned for their high-speed data access and compact sizes. These components are critical for applications that demand quick and accurate memory operations. The CYD09S18V18-200BBXI stands out with its low power usage and high bandwidth, making it suitable for energy-sensitive devices.
The CYD09S18V18-200BBXI finds applications in sectors such as healthcare, entertainment, and telecommunications. For instance, it is used in medical imaging devices that require fast data processing and in gaming consoles for seamless performance. Its adaptability and high performance make the CYD09S18V18-200BBXI a preferred Memory IC for diverse uses.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port, Synchronous
- Memory Size: 9Mb (512K x 18)
- Memory Interface: Parallel
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 3.3 ns
- Voltage - Supply: 1.42V ~ 1.58V, 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (17x17)