Shopping cart

Subtotal: $0.00

D251N12BXPSA1

Infineon Technologies
D251N12BXPSA1 Preview
Infineon Technologies
DIODE GEN PURP 1.2KV 255A
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C

Related Products

Taiwan Semiconductor Corporation

FR154G B0G

Vishay General Semiconductor - Diodes Division

1N4946GPHE3/73

Vishay General Semiconductor - Diodes Division

HFA08TB60STRR

Vishay General Semiconductor - Diodes Division

GP15KHE3/54

Infineon Technologies

BAS116E6433

Taiwan Semiconductor Corporation

1N4001GHR1G

Taiwan Semiconductor Corporation

RS1KL RHG

Taiwan Semiconductor Corporation

SS320 M6G

Rohm Semiconductor

RBR3L30ATE25

Taiwan Semiconductor Corporation

UG06BHA0G

Top