DCX53-13
Diodes Incorporated
Diodes Incorporated
TRANS PNP 80V 1A SOT89-3
$0.39
Available to order
Reference Price (USD)
2,500+
$0.14648
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the DCX53-13 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The DCX53-13 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
Related Products
Diodes Incorporated
APT13003DI-G1
onsemi
2SA1415S-TD-E
Microchip Technology
JAN2N3019S
Diodes Incorporated
BC847BLP4-7B
NTE Electronics, Inc
2N4403
NTE Electronics, Inc
NTE192A
Toshiba Semiconductor and Storage
2SA1162-O,LF
Harris Corporation
2N6771
Infineon Technologies
BC847BL3E6327XTMA1
NXP Semiconductors