DDB6U180N16RRB11BPSA2
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-411
$145.16
Available to order
Reference Price (USD)
1+
$145.16000
500+
$143.7084
1000+
$142.2568
1500+
$140.8052
2000+
$139.3536
2500+
$137.902
Exquisite packaging
Discount
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Engineered for excellence, the DDB6U180N16RRB11BPSA2 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The DDB6U180N16RRB11BPSA2 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the DDB6U180N16RRB11BPSA2.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Power - Max: 515 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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