DDC114EUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.08
Available to order
Reference Price (USD)
1+
$0.08014
500+
$0.0793386
1000+
$0.0785372
1500+
$0.0777358
2000+
$0.0769344
2500+
$0.076133
Exquisite packaging
Discount
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Optimize your designs with Diodes Incorporated's DDC114EUQ-7-F, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The DDC114EUQ-7-F is widely used in lighting systems, portable electronics, and automotive accessories. Diodes Incorporated's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the DDC114EUQ-7-F is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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