DDC123JH-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN PREBIAS 0.15W SOT563
$0.10
Available to order
Reference Price (USD)
3,000+
$0.16233
6,000+
$0.15351
15,000+
$0.14469
30,000+
$0.13440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDC123JH-7 by Diodes Incorporated is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. Diodes Incorporated's DDC123JH-7 is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN1905,LXHF(CT
Toshiba Semiconductor and Storage
RN1903FE,LXHF(CT
Nexperia USA Inc.
PEMD10,115
onsemi
MUN5235DW1T1G
Nexperia USA Inc.
PRMH10Z
Rohm Semiconductor
UMH11NFHATN
onsemi
EMC5DXV5T1G
Toshiba Semiconductor and Storage
RN4903,LXHF(CT
Rohm Semiconductor
UMB11NTN
onsemi