DDTC123JUA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04347
6,000+
$0.03780
15,000+
$0.03213
30,000+
$0.03024
75,000+
$0.02835
150,000+
$0.02520
Exquisite packaging
Discount
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Engineers choose DDTC123JUA-7-F for its exceptional linearity in amplification circuits. Diodes Incorporated's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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