DDTC124EUA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
$0.26
Available to order
Reference Price (USD)
3,000+
$0.04707
6,000+
$0.04140
15,000+
$0.03573
30,000+
$0.03384
75,000+
$0.03195
150,000+
$0.02880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For designers seeking plug-and-play transistor solutions, DDTC124EUA-7-F offers unmatched convenience. Diodes Incorporated's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
Toshiba Semiconductor and Storage
RN1417(TE85L,F)
Nexperia USA Inc.
PDTA114EM,315
Rohm Semiconductor
DTA143XMFHAT2L
Diodes Incorporated
DDTA125TUA-7-F
Infineon Technologies
BCR196WH6327XTSA1
Rohm Semiconductor
DTA143TMFHAT2L
Diodes Incorporated
DDTA144WE-7-F
onsemi
DTC114TET1
Rohm Semiconductor
DTC124GUAT106
Rohm Semiconductor