DF11MR12W1M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V 50A
$120.00
Available to order
Reference Price (USD)
1+
$127.96000
Exquisite packaging
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The DF11MR12W1M1B11BOMA1 by Infineon Technologies is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DF11MR12W1M1B11BOMA1 ensures consistent and dependable performance. Infineon Technologies's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 125nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1BM-2
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Infineon Technologies