DGD0507FN-7
Diodes Incorporated
Diodes Incorporated
IC GATE DRV HALF-BRDG DFN3030-10
$0.00
Available to order
Reference Price (USD)
3,000+
$0.72000
Exquisite packaging
Discount
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Diodes Incorporated presents the DGD0507FN-7 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 8V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 2A
- Input Type: CMOS/TTL
- High Side Voltage - Max (Bootstrap): 50 V
- Rise / Fall Time (Typ): 23ns, 18ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 10-WFDFN Exposed Pad
- Supplier Device Package: W-DFN3030-10
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