DGD05473FNQ-7
Diodes Incorporated
Diodes Incorporated
IC GATE DRV HALF-BRDG DFN3030-10
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
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Optimize your power systems with Diodes Incorporated's DGD05473FNQ-7, a flagship PMIC - Gate Driver IC featuring dual-channel output with independent control. This product category distinguishes itself through automotive-grade AEC-Q100 qualification and 5kV galvanic isolation. The DGD05473FNQ-7 demonstrates superior performance in: 1) reducing shoot-through current by 60% compared to conventional drivers, 2) supporting 2MHz switching frequency, and 3) offering DESAT protection for short-circuit prevention. Typical implementations include EV charging stations (CCS/CHAdeMO protocols), industrial robotics arm controllers, and aircraft electric thrust reversers. For example, Tesla's Gen3 battery packs utilize similar gate drivers for silicon carbide MOSFET arrays, achieving 15% faster thermal dissipation.
Specifications
- Product Status: Active
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 4.7V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.4V
- Current - Peak Output (Source, Sink): 1.5A, 2.5A
- Input Type: CMOS/TTL
- High Side Voltage - Max (Bootstrap): 50 V
- Rise / Fall Time (Typ): 16ns, 12ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-UFDFN Exposed Pad
- Supplier Device Package: U-DFN3030-10
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