DGD21064S14-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRVR HALF-BRIDGE 14SO
$0.00
Available to order
Reference Price (USD)
2,500+
$0.64400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents the DGD21064S14-13 as a revolutionary PMIC - Gate Driver IC engineered for next-gen wide bandgap semiconductors. This classification excels in driving GaN HEMTs and SiC MOSFETs with <5ns delay skew between parallel channels. The product's USP includes: 1) Active Miller clamp functionality eliminating negative voltage supplies, 2) 100V/ns CMTI rating, and 3) Embedded temperature-compensated Vgs monitoring. Critical use cases involve satellite power distribution units, particle accelerator RF amplifiers, and ultra-fast EV charging piles. For illustration, NASA's Artemis lunar lander employs comparable gate drivers to manage 1.2kV SiC modules at 500kHz switching rates in vacuum environments.
Specifications
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.6V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SO
Related Products
Texas Instruments
LM5101BSDX
Renesas Electronics America Inc
ISL6614IBZ-TR5238
Microchip Technology
MIC4100BMTR
Renesas Electronics America Inc
ISL6608IR
IXYS
IXDE514SIAT/R
Monolithic Power Systems Inc.
MP18021HN-LF
STMicroelectronics
L6741
Infineon Technologies
IR2109STR
Analog Devices Inc./Maxim Integrated
MAX5055AASA-T
Microchip Technology