DI2579N
Diotec Semiconductor
Diotec Semiconductor
TRANS NPN 400V 1A SOT223
$0.22
Available to order
Reference Price (USD)
1+
$0.22240
500+
$0.220176
1000+
$0.217952
1500+
$0.215728
2000+
$0.213504
2500+
$0.21128
Exquisite packaging
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Enhance your circuit designs with the DI2579N Bipolar Junction Transistor (BJT) from Diotec Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The DI2579N is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diotec Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 350mA
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 350mA, 5V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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