DMC2025UFDBQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.14
Available to order
Reference Price (USD)
1+
$0.14230
500+
$0.140877
1000+
$0.139454
1500+
$0.138031
2000+
$0.136608
2500+
$0.135185
Exquisite packaging
Discount
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Optimize your electronic projects with the DMC2025UFDBQ-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMC2025UFDBQ-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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