DMC3018LSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
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Optimize your electronic projects with the DMC3018LSD-13 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMC3018LSD-13 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.1A, 6A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 631pF @ 15V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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