DMC67D8UFDBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V U-DFN2020-
$0.12
Available to order
Reference Price (USD)
1+
$0.12361
500+
$0.1223739
1000+
$0.1211378
1500+
$0.1199017
2000+
$0.1186656
2500+
$0.1174295
Exquisite packaging
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Enhance your circuit designs with the DMC67D8UFDBQ-13, a premium Transistors - FETs, MOSFETs - Arrays product from Diodes Incorporated. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the DMC67D8UFDBQ-13 delivers consistent and reliable operation. Diodes Incorporated's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V, 20V
- Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
- Power - Max: 580mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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