DMG3415UFY4Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 16V 2.5A X2-DFN2015
$0.44
Available to order
Reference Price (USD)
3,000+
$0.17631
6,000+
$0.16669
15,000+
$0.15706
30,000+
$0.14551
75,000+
$0.14070
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG3415UFY4Q-7 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMG3415UFY4Q-7 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 650mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2015-3
- Package / Case: 3-XDFN
Related Products
Alpha & Omega Semiconductor Inc.
AOW11S65
IXYS
IXTP26P20P
Vishay Siliconix
SIHB22N60ET1-GE3
Nexperia USA Inc.
BUK72150-55A,118
Alpha & Omega Semiconductor Inc.
AOD3N60
Alpha & Omega Semiconductor Inc.
AOK40N30L
Infineon Technologies
IPD033N06NATMA1
Alpha & Omega Semiconductor Inc.
AO4484
Nexperia USA Inc.
PSMN1R6-40YLC,115
Toshiba Semiconductor and Storage