DMG3415UQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
$0.16
Available to order
Reference Price (USD)
1+
$0.16266
500+
$0.1610334
1000+
$0.1594068
1500+
$0.1577802
2000+
$0.1561536
2500+
$0.154527
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG3415UQ-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 42.5mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
NXP USA Inc.
BUK9E04-30B,127
Infineon Technologies
IRF9388TRPBF
Diodes Incorporated
DMTH4004SCTBQ-13
Panjit International Inc.
PJQ4407P_R1_00001
Alpha & Omega Semiconductor Inc.
AON1634
Rohm Semiconductor
QS5U16TR
Rohm Semiconductor
RTF016N05FRATL
onsemi
FCPF190N60E-F154
onsemi
NTLJS3180PZTAG
onsemi