DMG4800LSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 7.5A 8SO
$0.61
Available to order
Reference Price (USD)
2,500+
$0.22860
5,000+
$0.21540
12,500+
$0.20220
25,000+
$0.19296
Exquisite packaging
Discount
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The DMG4800LSD-13 by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DMG4800LSD-13 ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.5A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V
- Power - Max: 1.17W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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