DMG6601LVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 26TSOT
$0.42
Available to order
Reference Price (USD)
3,000+
$0.09810
6,000+
$0.09315
15,000+
$0.08573
30,000+
$0.08078
75,000+
$0.07335
150,000+
$0.07200
Exquisite packaging
Discount
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Optimize your electronic projects with the DMG6601LVT-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMG6601LVT-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.5A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 15V
- Power - Max: 850mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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