DMG6898LSDQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 9.5A 8SO
$0.97
Available to order
Reference Price (USD)
2,500+
$0.40388
5,000+
$0.37913
12,500+
$0.36675
25,000+
$0.36000
Exquisite packaging
Discount
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The DMG6898LSDQ-13 by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the DMG6898LSDQ-13 offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9.5A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
- Power - Max: 1.28W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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