DMG8601UFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 6.1A DFN
$0.63
Available to order
Reference Price (USD)
3,000+
$0.21313
6,000+
$0.19938
15,000+
$0.18563
30,000+
$0.17600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG8601UFG-7 by Diodes Incorporated is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DMG8601UFG-7 provides reliable operation under stringent conditions. Diodes Incorporated's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.1A
- Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 920mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: U-DFN3030-8
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