DMHT10H032LFJ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V V-DFN5045
$0.52
Available to order
Reference Price (USD)
1+
$0.52437
500+
$0.5191263
1000+
$0.5138826
1500+
$0.5086389
2000+
$0.5033952
2500+
$0.4981515
Exquisite packaging
Discount
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Choose the DMHT10H032LFJ-13 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMHT10H032LFJ-13 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 900mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-PowerVDFN
- Supplier Device Package: V-DFN5045-12 (Type C)
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