DMMT5551S-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 160V 0.2A SOT26
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10450
6,000+
$0.09925
15,000+
$0.09138
30,000+
$0.08613
75,000+
$0.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMMT5551S-7-F from Diodes Incorporated sets new benchmarks for Bipolar Transistor Arrays in consumer electronics. Its dual/triple transistor configuration enables sophisticated circuit designs for smart home devices, wearables, and battery management systems. This Discrete Semiconductor Product features gold-bonded leads for superior connectivity in high-vibration applications like automotive ECUs. Engineers value its drop-in replacement compatibility with legacy systems, reducing redesign efforts during component upgrades.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
Sanken
SMA4038
Diodes Incorporated
ZXTC2062E6TA
onsemi
EMZ1DXV6T1
Microchip Technology
2N2920U/TR
Nexperia USA Inc.
BCM857DS,135
Solid State Inc.
2N2222A
Diodes Incorporated
MMDT4413-7
Microchip Technology
JAN2N2920
Nexperia USA Inc.
PMP4501QASZ
Toshiba Semiconductor and Storage