DMN100-7-F
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 1.1A SC59-3
$0.62
Available to order
Reference Price (USD)
3,000+
$0.25718
6,000+
$0.24233
15,000+
$0.22748
30,000+
$0.21708
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN100-7-F from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMN100-7-F offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-59-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
IRF620STRLPBF
Micro Commercial Co
SI2318A-TP
Infineon Technologies
BSC079N03LSCGATMA1
Infineon Technologies
IPI120N04S302AKSA1
Toshiba Semiconductor and Storage
SSM3J378R,LF
STMicroelectronics
STB21NM60ND
Panjit International Inc.
PJD15P06A-AU_L2_000A1
Microchip Technology
APT14M100S
Infineon Technologies
IPN50R800CEATMA1
NTE Electronics, Inc