DMN1003UCA6-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CHANNEL X3-DSN3518-6
$0.40
Available to order
Reference Price (USD)
3,000+
$0.44624
6,000+
$0.41889
15,000+
$0.40522
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the DMN1003UCA6-7, a premium Transistors - FETs, MOSFETs - Arrays product from Diodes Incorporated. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the DMN1003UCA6-7 delivers consistent and reliable operation. Diodes Incorporated's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
- Power - Max: 2.67W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: X3-DSN3518-6
Related Products
Microchip Technology
APTC60AM35SCTG
Diodes Incorporated
DMN2024UVTQ-13
Diodes Incorporated
DMC2710UDWQ-7
Advanced Linear Devices Inc.
ALD210800ASCL
Advanced Linear Devices Inc.
ALD110902PAL
Vishay Siliconix
SI7272DP-T1-GE3
Vishay Siliconix
SQJ992EP-T1_BE3
Microchip Technology
APTC60HM70RT3G
Nexperia USA Inc.
PMV280ENEA,215
Toshiba Semiconductor and Storage