DMN10H220LPDW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.24
Available to order
Reference Price (USD)
1+
$0.23819
500+
$0.2358081
1000+
$0.2334262
1500+
$0.2310443
2000+
$0.2286624
2500+
$0.2262805
Exquisite packaging
Discount
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The DMN10H220LPDW-13 by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the DMN10H220LPDW-13 offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 25V
- Power - Max: 2.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
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