DMN1150UFL3-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CHA 12V 2A DFN1310
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09816
6,000+
$0.08916
15,000+
$0.08016
30,000+
$0.07567
75,000+
$0.06802
150,000+
$0.06577
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance DMN1150UFL3-7 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMN1150UFL3-7 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 2A
- Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1310-6 (Type B)
Related Products
Vishay Siliconix
SQJQ910EL-T1_GE3
Advanced Linear Devices Inc.
ALD1102PAL
Texas Instruments
CSD87502Q2T
Rohm Semiconductor
SH8KB6TB1
IXYS
VMM300-03F
Microchip Technology
MSCSM120AM11CT3AG
Vishay Siliconix
SI4931DY-T1-E3
Microchip Technology
MSCSM120HM31CT3AG
onsemi
NVMFD6H846NLT1G
Diodes Incorporated