DMN2004DWK-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 0.54A SOT-363
$0.54
Available to order
Reference Price (USD)
3,000+
$0.16120
6,000+
$0.15240
15,000+
$0.14360
30,000+
$0.13304
75,000+
$0.12864
Exquisite packaging
Discount
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Choose the DMN2004DWK-7 from Diodes Incorporated for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the DMN2004DWK-7 stands out for its reliability and efficiency. Diodes Incorporated's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 540mA
- Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
- Power - Max: 200mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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