DMN2011UFX-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 12.2A DFN2050-4
$0.90
Available to order
Reference Price (USD)
3,000+
$0.37480
6,000+
$0.35183
15,000+
$0.34034
30,000+
$0.33408
Exquisite packaging
Discount
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The DMN2011UFX-7 by Diodes Incorporated is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the DMN2011UFX-7 offers superior functionality and longevity. Trust Diodes Incorporated to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-VFDFN Exposed Pad
- Supplier Device Package: V-DFN2050-4
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