DMN2022UNS-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 20V POWERDI3333-8
$0.65
Available to order
Reference Price (USD)
2,000+
$0.26925
6,000+
$0.25275
10,000+
$0.24450
Exquisite packaging
Discount
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Upgrade your electronic designs with the DMN2022UNS-7 by Diodes Incorporated, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the DMN2022UNS-7 ensures energy efficiency and robust performance. Diodes Incorporated's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXB)
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